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US 2017/0373248 A1Published application
Materials and components in phase change memory devices
AssigneeIntel Corporation
InventorsValter Soncini, Davide Erbetta
Life of this patent
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Abstract
Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith are disclosed and described. Such electrodes can have a resistivity of from 10 to 100 mOhm·cm.
Claims23
A method of forming a phase change memory structure, comprising:
- forming a first, second, and third electrode with a phase change material disposed between the first and second electrode and a select device material disposed between the second and third electrode, wherein at least one of the first, second, or third electrodes includes a doped electrode material having a resistivity of from 10 to 100 mOhm·cm.
A phase change memory cell, comprising:
- a stack structure including:
- a first electrode;
- a second electrode;
- and
- a phase change material disposed between and forming Ohmic contacts with the first electrode and the second electrode;
- a third electrode;
- and
- a select device material disposed between the third electrode and the second electrode;
- wherein at least one of the first, second, or third electrodes includes an electrode material doped to have a resistivity of from about 10 to about 100 mOhm·cm.
6 more elements
Dependencies are inferred from the claim text.