Transistors and Methods of Forming Transistors
AssigneeMicron Technology, Inc.
InventorsKamal M. Karda, Gurtej S. Sandhu, Chandra Mouli
Life of this patent
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Abstract
Some embodiments include a transistor having a drain region and a source region. A conductive gate is between the source and drain regions. First channel material is between the gate and the source region. The first channel material is spaced from the gate by one or more insulative materials. Second channel material is between the first channel material and the source region, and directly contacts the source region. The first and second channel materials are transition metal chalcogenide. One of the source and drain regions is a hole reservoir region and the other is an electron reservoir region. Tunnel dielectric material may be between the first and second channel materials.
Claims23
1-35. (canceled)
A transistor comprising:
- a source region and a drain region;
- and
- a channel material between the source and drain regions, with said channel material comprising molybdenum and sulfur.
A transistor comprising:
- a source region and a drain region;
- a pair of channel regions between the source and drain regions;
- and
- one channel region of said pair of channel regions comprising molybdenum and sulfur;
- the other channel region of said pair of channel regions comprising tungsten and selenium.
A transistor comprising:
- a source region and a drain region;
- a gate between the source and drain regions;
- first channel material between the gate and the source region;
- the first channel material being spaced from the gate by gate dielectric material;
- second channel material between the first channel material and the source region, the second channel material being spaced from the first channel material by tunnel dielectric material, the tunnel dielectric material comprising one or more of hafnium oxide, aluminum oxide, zirconium oxide and silicon oxide;
- and
- wherein the first and second channel materials are different from one another;
- with one of the first and second channel materials comprising sulfur, and the other of the first and second channel materials comprising selenium.
Dependencies are inferred from the claim text.