Perpendicular magnetic tunnel junction devices with high thermal stability
AssigneeArizona Board of Regents on Behalf of the University of Arizona
InventorsWeigang WANG, Hamid ALMASI
Life of this patent
Estimating the term…
Abstract
A perpendicular magnetic tunnel junction device (pMTJ) is provided that has a structure of a first heavy metal layer, a first thin dusting layer on the first heavy metal layer, a first CoFeB layer on the thin dusting layer, a MgO barrier layer on the first CoFeB layer, a second CoFeB layer on the MgO barrier layer, a second thin dusting layer on the CoFeB layer; and a second heavy metal layer on the thin dusting layer. The insertion of the thin dusting layer improves thermal stability of the pMTJ structure.
Claims18
A perpendicular magnetic tunnel junction device (pMTJ) comprising:
- a first heavy metal layer;
- a first thin dusting layer on the first heavy metal layer;
- a first CoFeB layer on the first thin dusting layer;
- a MgO barrier layer on the first CoFeB layer;
- a second CoFeB layer on the MgO barrier layer;
- a second thin dusting layer on the second CoFeB layer;
- and
- a second heavy metal layer on the thin dusting layer.
A highly thermal stable magnetic random access memory (MRAM) unit comprising:
- at least one perpendicular magnetic tunnel junction device (pMTJ), the pMTJ comprising:
- a CoFeB layer;
- and
- a thin dusting layer in contact with CoFeB layer.
A method of fabricating a pMTJ, the method comprising:
- forming a first heavy metal layer;
- forming a first dusting layer on the first heavy metal layer;
- forming a first CoFeB layer on the first dusting layer;
- forming a MgO barrier layer on the first CoFeB layer;
- forming a second CoFeB layer on the MgO barrier layer;
- forming a second dusting layer on the second CoFeB layer;
- forming a second heavy metal layer on the second dusting layer;
- and
- annealing the pMTJ.
Dependencies are inferred from the claim text.