Peltier cooling element and method for manufacturing same

2:

• The Peltier cooling element according to claim 1, wherein an amount of the ionic liquid is from 0.01 to 50% by mass in the thermoelectric semiconductor composition.

3:

• The Peltier cooling element according to claim 1, wherein the ionic liquid comprises at least one cation selected from the group consisting of a pyridinium cation, a derivative of a pyridinium cation, an imidazolium cation, and a derivative of an imidazolium cation.

4:

• The Peltier cooling element according to claim 1, wherein the ionic liquid comprises a halide anion.

5:

• The Peltier cooling element according to claim 4, wherein the halide anion comprises at least one anion selected from the group consisting of Cl−, Br−, and I−.

6:

• The Peltier cooling element according to claim 1, wherein the heat resistant resin is at least one selected from the group consisting of a polyamide resin, a polyamideimide resin, a polyimide resin, and an epoxy resin.

7:

• The Peltier cooling element according to claim 1, wherein an amount of the thermoelectric semiconductor fine particles is from 30 to 99% by mass in the thermoelectric semiconductor composition.

8:

• The Peltier cooling element according to claim 1, wherein a mean particle size of the thermoelectric semiconductor fine particles is from 10 nm to 200 μm.

9:

• The Peltier cooling element according to claim 1, wherein the thermoelectric semiconductor fine particles are fine particles of a bismuth-tellurium-based thermoelectric semiconductor material.

10:

• The Peltier cooling element according to claim 1, wherein the support is a plastic film.

11:

• The Peltier cooling element according to claim 10, wherein the plastic film is at least one selected from the group consisting of a polyimide film, a polyamide film, a polyetherimide film, a polyaramid film, and a polyamideimide film.

13:

• The method according to claim 12, wherein the support is a plastic film.