Thermoelectric material, and preparation method therefor and application thereof
AssigneeFujian Institute of Research On the Structure of Matter, Chiness Academy of Sciences
InventorsLiming WU, Hua LIN, Ling CHEN
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Abstract
The present application discloses a thermoelectric material, which contains CsAg5Te3 crystal material. At 700K, the thermoelectric material has an optimum dimensionless figure-of-merit Z1 as high as 1.6 and a high stability, and the thermoelectric material can be recycled. The present application also discloses a method for preparing the CsAg5Te3 crystal material. The CsAg5Te3 crystal material is one-step synthesized by a high-temperature solid-state method, using a raw material containing Cs, Ag and Te, so that the high-purity product is obtained while the synthesis time is greatly shortened.
Claims10
A thermoelectric material, which contains a CsAg5Te3 crystal material.
A method for preparing CsAg5Te3 crystal material, wherein CsAg5Te3 crystal material is obtained by placing a raw material containing cesium element, silver element and tellurium element under a vacuum condition and using high temperature solid phase method.
Dependencies are inferred from the claim text.