P-n separation metal fill for flip chip leds
AssigneeKoninklijke Philips N.V.
InventorsJipu Lei, Yajun Wei, Alexander H. Nickel, Stefano Schiaffino, Daniel Alexander Steigerwald
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AssigneeKoninklijke Philips N.V.
InventorsJipu Lei, Yajun Wei, Alexander H. Nickel, Stefano Schiaffino, Daniel Alexander Steigerwald
Estimating the term…
A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.
1-19. (canceled)
A light-emitting device, comprising:
A light-emitting device, comprising:
Dependencies are inferred from the claim text.