Method for manufacturing light emitting diode
AssigneeAdvanced Optoelectronic Technology, Inc.
InventorsCHING-HSUEH CHIU, CHIA-HUNG HUANG, YA-WEN LIN, PO-MIN TU, SHIH-CHENG HUANG
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Abstract
A light emitting diode includes a first electrode, a second electrode, and an epitaxial structure. The epitaxial structure is arranged on the first electrode, and electrically connects with the first electrode and the second electrode. The second electrode surrounds periphery of the epitaxial structure to reflect light from the epitaxial structure out from the top of the epitaxial structure. A method for manufacturing the light emitting diode is also presented. The light emitting diode and the method increase lighting efficiency of the light emitting diode.
Claims10
A method for manufacturing a light emitting diode, comprising:
- growing an epitaxial layer on a light transmission substrate;
- the epitaxial layer comprising at least a first semiconductor layer, an active layer and a second semiconductor layer that order from the top down;
- defining a plurality of annular pits on the epitaxial layer;
- each annular pit penetrating through at least the first semiconductor layer and the active layer;
- filling each annular pit with a corresponding insulating layer;
- forming a plurality of individual epitaxial structures by etching parts of the epitaxial layer surrounding periphery of the annular pits;
- the epitaxial structures being spaced apart from each other and a corresponding channel being formed therebetween;
- forming a plurality of conductive layers in the channels to be the second electrode;
- each conductive layer covering periphery of a corresponding epitaxial structure;
- dividing the light transmission substrate to form a plurality of separate epitaxial structures;
- and
- forming a first electrode to form a light emitting diode.
Dependencies are inferred from the claim text.