Nitride White-light Light-Emitting Diode

A light-emitting system comprising a plurality of nitride white-light light-emitting diodes (LEDs), each LED including:

• a substrate;
• an epitaxial layer, including
• an N-type nitride;
• a quantum well;
• and
• a P-type nitride;
• an N-type electrode;
• a P-type electrode;
• channels at the substrate and the epitaxial layer;
• temperature isolation layers with low thermal conductivity material over the channels to form three independent temperature zones (Zones I/II/III);
• temperature control layers with high thermal conductivity material over a side wall of the epitaxial layer and a back surface of the substrate at the Zones I/II/III;
• wherein:
• the temperature control layers are configured to control temperature of the epitaxial layer and the substrate, based on difference in thermal expansion coefficients, thereby adjusting lattice constants of the N-type and/or P-type nitride and the substrate at the Zones I/II/III, and adjusting biaxial stress to which the N-type and/or P-type nitride subject;
• the quantum well, under different biaxial stress, is configured to change conduction band bottom and valence band top positions to change forbidden band widths and light-emitting wavelengths;
• and
• by controlling biaxial stress, the LED with a same In component is configured to emit red, green and blue lights to achieve white light emitting with a single chip.