Method for producing group iii nitride semiconductor light-emitting device
AssigneeToyoda Gosei Co., Ltd.
InventorKengo NAGATA
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Abstract
The present techniques provide a method for producing a Group III nitride semiconductor light-emitting device, which method is intended to grow semiconductor layers with high crystallinity on a sapphire substrate having a small area ratio of a base surface to a main surface. In preparing a substrate, a substrate is prepared, of which a main surface has a c-plane base surface and a plurality of projections protruding from the base surface, and the area ratio of the base surface to the main surface is 8% to 32%. In preparing an AlN buffer layer, the AlN buffer layer having a thickness of 34 nm to 14 nm is formed through MOCVD. The thickness of the AlN buffer layer is decreased as the area ratio of the base surface to the main surface of the substrate is increased.
Claims12
A method for producing a Group III nitride semiconductor light-emitting device, the method comprising:
- preparing a sapphire substrate;
- forming an AlN buffer layer on the sapphire substrate;
- and
- forming a Group III nitride semiconductor layer on the AlN buffer layer, wherein
- in the preparing a sapphire substrate,
- the sapphire substrate is prepared, of which a main surface has a c-plane base surface and a plurality of projections protruding from the base surface, and an area ratio of the base surface to the main surface is 8% to 32%;
- in the forming an AlN buffer layer,
- an AlN buffer layer having a thickness in a range of 34 nm to 14 nm is formed through MOCVD, the thickness of the AlN buffer layer is decreased as the area ratio of the base surface to the main surface of the substrate is increased;
- and
- in the forming a Group III nitride semiconductor layer,
- an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are formed in this order on the AlN buffer layer.
A method for producing a Group III nitride semiconductor light-emitting device, the method comprising:
- preparing a sapphire substrate;
- forming an AlN buffer layer on the sapphire substrate;
- and
- forming a Group III nitride semiconductor layer on the AlN buffer layer;
- in the preparing a sapphire substrate,
- the sapphire substrate is prepared, of which a main surface has a c-plane base surface and a plurality of projections protruding from the base surface, and an area ratio of the base surface to the main surface is 8% to 32%;
- in the forming an AlN buffer layer,
- an AlN buffer layer having a thickness in a range of 57 nm to 37 nm is formed by sputtering, the thickness of the AlN buffer layer is decreased as the area ratio of the base surface to the main surface of the substrate is increased;
- and
- in the forming a Group III nitride semiconductor layer,
- an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are formed in this order on the AlN buffer layer.
Dependencies are inferred from the claim text.