Nitride semiconductor device
AssigneePanasonic Corporation
InventorsDaisuke SHIBATA, Kenichiro TANAKA
Life of this patent
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Abstract
A nitride semiconductor device is provided that includes: a substrate; an n-type drift layer above the front surface of the substrate; a p-type base layer above the n-type drift layer; a gate opening in the base layer that reaches the drift layer; an n-type channel forming layer that covers the gate opening and has a channel region; a gate electrode above a section of the channel forming layer in the gate opening; an opening that is separated from the gate electrode and reaches the base layer; an opening formed in a bottom surface of said opening and reaching the drift layer; a source electrode covering the openings; and a drain electrode on the rear surface of the substrate.
Claims9
A nitride semiconductor device, comprising:
- a substrate having a first major surface and a second major surface on opposite sides;
- a first nitride semiconductor layer of a first conductivity type above the first major surface;
- a second nitride semiconductor layer of a second conductivity type above the first nitride semiconductor layer;
- a first opening in the second nitride semiconductor layer, the first opening reaching the first nitride semiconductor layer;
- a third nitride semiconductor layer of the first conductivity type that covers the first opening and has a channel region;
- a gate electrode above a section of the third nitride semiconductor layer in the first opening;
- a second opening that is separated from the gate electrode and reaches the second nitride semiconductor layer;
- a third opening in a bottom surface of the second opening, the third opening reaching the first nitride semiconductor layer;
- a source electrode covering the second opening and the third opening;
- and
- a drain electrode on the second major surface.
Dependencies are inferred from the claim text.