Electronic device having schottky diode

An electronic device comprising:

• a semiconductor substrate;
• a first electrode and a second electrode provided on the semiconductor substrate;
• a first semiconductor region in the semiconductor substrate, the first semiconductor region including a first surface portion in contact with the second electrode;
• a second semiconductor region in the semiconductor substrate, the second semiconductor region having the same conductivity-type as that of the first semiconductor region and overlapping the first electrode;
• a third semiconductor region in the semiconductor substrate, the third semiconductor region having a different conductivity-type from that of the first semiconductor region, overlapping the second electrode, and including portions spaced apart from each other;
• and
• an isolation region between the second semiconductor region and the third semiconductor region.

An electronic device comprising:

• a semiconductor substrate;
• a first electrode and a second electrode provided on the semiconductor substrate;
• a first semiconductor region formed in the semiconductor substrate, the first semiconductor region including a first surface portion in contact with the second electrode to form a Schottky diode with the second electrode;
• a second semiconductor region formed in the semiconductor substrate and vertically overlapping the first electrode;
• a third semiconductor region formed in the semiconductor substrate and vertically overlapping the second electrode;
• and
• an isolation region between the second semiconductor region and the third semiconductor region,
• wherein the isolation region includes a first isolation portion and a second isolation portion spaced apart from one another when viewed in a plan view, and an isolation disconnection region between the first isolation portion and the second isolation portion, and
• wherein the isolation disconnection region provides a current path between the first isolation portion and the second isolation portion.