Transistor and semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
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Abstract
A transistor includes a gate electrode, a first conductor, a second conductor, a gate insulator, and a metal oxide. The gate insulator is located between the gate electrode and the metal oxide. The gate electrode includes a region overlapping with the metal oxide with the gate insulator therebetween. The first conductor and the second conductor each include a region in contact with top and side surfaces of the metal oxide. The metal oxide has a layered structure in which oxides each having a first band gap and oxides each having a second band gap and being adjacent to the oxide having the first band gap are alternately stacked in a thickness direction. The metal oxide includes two or more oxides each having the first band gap. The first band gap is smaller than the second band gap.
Claims24
A transistor comprising:
- a gate electrode;
- a first conductor;
- a second conductor;
- a gate insulator;
- and
- a metal oxide,
- wherein the gate insulator is located between the gate electrode and the metal oxide,
- wherein the gate electrode includes a region overlapping with the metal oxide with the gate insulator therebetween,
- wherein the first conductor and the second conductor each include a region in contact with top and side surfaces of the metal oxide,
- wherein the metal oxide has a layered structure in which oxide layers each having a first band gap and an oxide layer having a second band gap and being adjacent to the oxide layer having the first band gap are alternately stacked in a thickness direction, and
- wherein the first band gap is smaller than the second band gap.
A transistor comprising:
- a gate electrode;
- a first conductor;
- a second conductor;
- a gate insulator;
- a first metal oxide;
- a second metal oxide;
- and
- a third metal oxide,
- wherein the gate insulator is located between the gate electrode and the first metal oxide,
- wherein the gate electrode includes a region overlapping with the second metal oxide with the gate insulator and the first metal oxide therebetween,
- wherein the first conductor and the second conductor each include a region in contact with top and side surfaces of the second metal oxide,
- wherein the second metal oxide includes a region in contact with a top surface of the third metal oxide,
- wherein the second metal oxide has a layered structure in which oxide layers each having a first band gap and an oxide layer having a second band gap and being adjacent to the oxide layer having the first band gap are alternately stacked in a thickness direction, and
- wherein the first band gap is smaller than the second band gap.
Dependencies are inferred from the claim text.