Metal oxide thin film transistors (tfts) and the manufacturing method thereof

Abstract

The present disclosure relates to a metal oxide TFT and the manufacturing method thereof. The TFT includes a substrate, a buffering layer formed on the substrate, and an active layer formed on the buffering layer. The TFT further includes a source and a drain formed at two lateral sides of the active layer, a gate insulation layer formed on the active layer, a gate formed on the gate insulation layer, and an dielectric layer formed on the gate. The dielectric layer is made by SiOx. The dielectric layer is made by SiOx, instead of SiNx, wherein the content of the hydrogen ion may be lower. Thus, the hydrogen ion may be prevented from being diffused within the active layer so as to avoid the huge electrical leakage, which enhances the electrical performance of the metal oxide TFT.

Dependencies are inferred from the claim text.