Gallium Nitride High-Electron Mobility Transistors with Deep Implanted P-Type Layers in Silicon Carbide Substrates for Power Switching and Radio Frequency Applications and Process for Making the Same
AssigneeCree, Inc.
InventorsSaptharishi Sriram, Alexander Suvorov, Christer Hallin
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Abstract
The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.
Claims20
A high-electron mobility transistor comprising:
- a SiC substrate layer;
- a GaN buffer layer arranged on the SiC substrate layer;
- and
- a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided,
- wherein the p-type material layer is provided in one of the following:
- the SiC substrate layer and a first layer arranged on the SiC substrate layer.
A method of making a high-electron mobility transistor comprising:
- providing a SiC substrate layer;
- providing a GaN buffer layer on the SiC substrate layer;
- providing a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided;
- and
- providing the p-type material layer in one of the following:
- the SiC substrate layer and a first layer arranged on the SiC substrate layer.
A high-electron mobility transistor comprising:
- a substrate layer;
- a buffer layer arranged on the substrate layer;
- and
- a p-type material having a length parallel to a surface of the substrate layer over which the buffer layer is provided,
- a p+ type material layer having a length parallel to a surface of the substrate layer over which the buffer layer is provided, the length of the p+ type material layer being less than an entire length of the substrate layer,
- wherein the p-type material and the p+ type material layer are provided in one of the following:
- the substrate layer and a first layer arranged on the substrate layer.
Dependencies are inferred from the claim text.