Systems and methods for providing vertical access to the collector of a heterojunction bipolar transistor

A method of manufacturing a heterojunction bipolar transistor comprising:

• forming an emitter having a conductive emitter contact coupled to a first side of the emitter;
• forming a base having a first side coupled to a second side of the emitter opposite the first side of the emitter;
• forming a collector coupled to the base on a second side of the base opposite the emitter, wherein an area of a junction between the base and the collector is less than or equal to an area of a junction between the base and the emitter;
• forming a first conductive base contact coupled to the base;
• and
• forming a conductive collector contact coupled to the collector on the side of the collector opposite the emitter and substantially parallel to the first conductive base contact.

A heterojunction bipolar transistor comprising:

• means for emitting having a conductive emitter contact coupled to a first side of the means for emitting;
• a first side of a means for providing a base coupled to a second side of the means for emitting opposite the first side of the means for emitting;
• means for collecting coupled to the means for providing the base on a second side of the means for providing the base opposite the means for emitting, wherein an area of a junction between the means for providing the base and the means for collecting is less than or equal to an area of a junction between the means for providing the base and the means for emitting;
• a first conductive base contact coupled to the means for providing the base;
• and
• a conductive collector contact coupled to the means for collecting on the side of the means for collecting opposite the means for emitting and substantially parallel to the first conductive base contact.