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US 2017/0373173 A1Published application
Semiconductor device
AssigneeNational University Corporation Hokkaido Universit
InventorsHiromichi OHTA, Takayoshi KATASE, Yuki SUZUKI
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Abstract
This semiconductor device comprises an active layer that is formed of an oxide magnetic material and a porous dielectric body that contains water and is provided on the active layer. By using hydrogen and oxygen which are formed by electrolysis of water, the crystal structure of the active layer is changed between a ferromagnetic metal and an antiferromagnetic insulating body.
Claims12
A semiconductor device comprising:
- an active layer comprising an oxide magnetic material;
- and
- porous dielectrics which contains water and is provided on the active layer,
- wherein hydrogen ions and hydroxide ions generated by electrolysis of the water are used to change a crystal structure of the active layer between a ferromagnetic metal and an antiferromagnetic insulator.
1 more element
A semiconductor device comprising:
- a substrate;
- an active layer which is provided on the substrate and comprises an oxide magnetic material;
- a source electrode and a drain electrode disposed on the substrate so as to sandwich the active layer;
- porous dielectrics which contains water and is provided on the active layer;
- and
- a gate electrode provided on the porous dielectrics,
- wherein a voltage is applied to the gate electrode to electrolyze the water, and hydrogen ions and hydroxide ions generated by the electrolyzing is used to change a crystal structure of the active layer between a ferromagnetic metal and an antiferromagnetic insulator.
4 more elements
Dependencies are inferred from the claim text.