Semiconductor structure

A semiconductor structure, comprising:

• a semiconductor substrate having a metal gate structure formed on a surface of the semiconductor substrate;
• source/drain regions formed in the semiconductor substrate at both sides of the metal gate structure;
• a first dielectric layer, a portion of a top surface of which is lower than a top surface of the metal gate structure, covering the metal gate structure and the semiconductor substrate;
• a cap layer formed on the top surface of the metal gate structure and a portion of the first dielectric layer;
• a protective sidewall spacer having a sidewall with a first portion covering a side surface of the cap layer and a second portion covering a side surface of a portion of the first dielectric layer covered by the cap layer;
• a second dielectric layer covering the cap layer, the protective sidewall spacer and the first dielectric layer;
• and
• at least a first conductive via formed in the second dielectric layer and the first dielectric layer and on one of the source region and the drain region.