Semiconductor device and manufacturing method of semiconductor device
AssigneeFujitsu Limited
InventorsShirou OZAKI, NAOYA OKAMOTO
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Abstract
A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor, on a substrate; a second semiconductor layer formed of a nitride semiconductor, on the first semiconductor layer; a source electrode and a drain electrode formed on the second semiconductor layer; a first insulating film formed on the second semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode formed on the second insulating film. The first insulating film includes a nitride film formed on a side of the second semiconductor layer, and an oxynitride film formed on the nitride film, and the second insulating film is formed of an oxide.
Claims20
A semiconductor device comprising:
- a first semiconductor layer formed of a nitride semiconductor, on a substrate;
- a second semiconductor layer formed of a nitride semiconductor, on the first semiconductor layer;
- a source electrode and a drain electrode formed on the second semiconductor layer;
- a first insulating film formed on the second semiconductor layer;
- a second insulating film formed on the first insulating film;
- and
- a gate electrode formed on the second insulating film,
- wherein the first insulating film includes a nitride film formed on a side of the second semiconductor layer, and an oxynitride film formed on the nitride film, and
- the second insulating film is formed of an oxide.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first semiconductor layer on a substrate, by a nitride semiconductor;
- forming a second semiconductor layer on the first semiconductor layer, by a nitride semiconductor;
- forming a first insulating film that is formed of a nitride film and an oxynitride film, on the second semiconductor layer;
- forming a second insulating film on the first insulating film, by an oxide;
- forming a source electrode and a drain electrode on the second semiconductor layer;
- and
- forming a gate electrode on the second insulating film.
Dependencies are inferred from the claim text.