Semiconductor device having impurity region

A semiconductor device, comprising:

• a first fin active region passing through a first isolation region, and protruding from the first isolation region, wherein the first fin active region includes protruding regions and a recessed region between the protruding regions, and wherein the recessed region has a depth greater than a width;
• first gate structures overlapping the protruding regions of the first fin active region;
• first insulating spacers on lateral surfaces of the first gate structures;
• a first epitaxial layer filling the recessed region;
• and
• an impurity region surrounding lateral surfaces and a bottom surface of the first epitaxial layer, and having the same conductivity type as a conductivity type of the first epitaxial layer,
• wherein side walls of the recessed region overlap bottom surfaces of the first insulating spacers while being spaced apart from the first gate structures.

A semiconductor device, comprising:

• a fin active region having protruding regions and a recessed region between the protruding regions, the fin active region extending along a second direction;
• gate structures overlapping the protruding regions and extending along a third direction, orthogonal to the second direction;
• an epitaxial layer in the recessed region, and having a thickness in a first direction, orthogonal to the second and third directions, greater than a width in the second direction;
• and
• an impurity region in the fin active region, surrounding side walls and a bottom of the recessed region, the impurity region and the epitaxial layer having a same conductivity type, the impurity region having a majority impurity different from a majority impurity in at least a portion of the epitaxial layer.