Iii-v extension by high temperature plasma doping
AssigneeInternational Business Machines Corporation
InventorsRobert L. Bruce, Kevin K. Chan, Sebastian U. Engelmann, Renee T. Mo, Christopher Scerbo, Hongwen Yan, Jeng-Bang Yau
Life of this patent
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Abstract
A method for forming an overlap transistor includes forming a gate structure over a III-V material, wet cleaning the III-V material on side regions adjacent to the gate structure and plasma cleaning the III-V material on the side regions adjacent to the gate structure. The III-V material is plasma doped on the side regions adjacent to the gate structure to form plasma doped extension regions that partially extend below the gate structure.
Claims20
A method for forming an overlap transistor, comprising:
- forming a gate structure over a III-V material;
- wet cleaning the III-V material on side regions adjacent to the gate structure;
- plasma cleaning the III-V material on the side regions adjacent to the gate structure;
- and
- plasma doping the III-V material on the side regions adjacent to the gate structure to form plasma doped extension regions that partially extend below the gate structure.
A method for forming an overlap transistor, comprising:
- forming fins from a material;
- focusing a gate structure over the fins;
- removing a native oxide from the fins by:
- wet cleaning the fins;
- and
- plasma cleaning the fins to remove stable native oxides;
- and
- plasma doping the fins on a top and side regions of the fins adjacent to the gate structure to form plasma doped extension regions in the fins that partially extend below the gate structure.
An overlap transistor, comprising:
- a gate structure formed over a III-V material, the III-V material having native oxides removed;
- plasma doped extension regions formed in the III-V material on the side regions adjacent to the gate structure that partially extend below the gate structure;
- and
- a channel formed between the plasma doped extension regions below the gate structure.
Dependencies are inferred from the claim text.