Semiconductor Device with Field Dielectric in an Edge Area

A semiconductor device, comprising:

• a semiconductor body comprising transistor cells arranged in an active area and absent in an edge area between the active area and a side surface of the semiconductor body;
• a field dielectric adjoining a first surface of the semiconductor body and separating, in the edge area, a conductive structure connected to gate electrodes of the transistor cells from the semiconductor body, the field dielectric comprising a transition from a first to a second, greater vertical extension;
• and
• a non-depletable extension zone of a conductivity type of body/anode zones of the transistor cells and electrically connected to at least one of the body/anode zones, wherein the transition is in the vertical projection of the non-depletable extension zone,
• wherein the non-depletable extension zone surrounds the active area at uniform width.