Integrated Circuit Devices Having Features With Reduced Edge Curvature and Methods for Manufacturing the Same

A method for manufacturing a structure, the method comprising:

• providing a first layer of material having a first amorphous phase region meeting crystalline phase material at a first interface, the crystalline phase material having crystallographic planes with differing epitaxial growth rates, the first layer being oriented such that a first one of the crystallographic planes having the slowest of the epitaxial growth rates extends vertically with respect to a top surface of the first layer of crystalline phase material;
• and
• partially recrystallizing the first amorphous phase region into the crystalline phase to form a recrystallized portion adjacent the first interface and leave a remaining portion in the amorphous phase, the remaining portion having a second interface with the recrystallized portion,
• wherein the second interface extends parallel to the first one of the crystallographic planes having the slowest of the epitaxial growth rates.