Ffs mode array substrate and manufacturing method thereof
AssigneeShenzhen China Star Optoelectronics Technology Co., Ltd.
InventorSHIMIN GE
Life of this patent
Estimating the term…
Abstract
An FFS mode array substrate and a manufacturing method thereof are provided. The FFS mode array substrate has: a second insulation layer deposited on a base layer, wherein a first through hole and a second through hole are formed in the second insulation layer; a pixel electrode layer deposited on the second insulation layer, wherein the pixel electrode layer is provided with a plurality of pixel electrodes; and a third insulation layer formed on a source electrode, a drain electrode, the pixel electrodes, and the second insulation layer.
Claims10
A manufacturing method of an FFS mode array substrate, comprising steps of:
- forming a base layer, wherein the base layer is provided with a gate electrode and a channel semiconductor layer;
- depositing a second insulation layer on the base layer, and forming a first through hole and a second through hole which are used to expose the channel semiconductor layer;
- depositing a pixel electrode layer on the second insulation layer, wherein the pixel electrode layer is provided with a plurality of pixel electrode regions and first spacing regions located between each two of the pixel electrode regions;
- depositing a first metal layer on the pixel electrode layer, wherein the first metal layer is provided with a source electrode region, a drain electrode region, and a second spacing region located between the source electrode region and the drain electrode region;
- coating a first photoresist layer on the first metal layer, and removing photoresist of the first photoresist layer which corresponds to the first spacing regions and the second spacing regions;
- etching the first metal layer and the pixel electrode layer to respectively form a source electrode and a drain electrode in the source electrode region and the drain electrode region of the first metal layer, and to form a plurality of pixel electrodes in the pixel electrode regions of the pixel electrode layer;
- removing the first photoresist layer, and removing the first metal layer which is on the pixel electrodes;
- and
- depositing a third insulation layer on the source electrode, the drain electrode, the pixel electrodes and the second insulation layer.
An FFS mode array substrate, comprising:
- a base layer provided with a gate electrode and a channel semiconductor layer thereon;
- a second insulation layer deposited on the base layer, wherein a first through hole and a second through hole exposing the channel semiconductor layer are formed in the second insulation layer;
- a pixel electrode layer deposited on the second insulation layer, wherein the pixel electrode layer is provided with a plurality of pixel electrodes;
- a source electrode and a drain electrode formed on the pixel electrode layer;
- and
- a third insulation layer formed on the source electrode, the drain electrode, the pixel electrodes and the second insulation layer.
Dependencies are inferred from the claim text.