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US 2017/0372986 A1Published application
LDMOS Transistor and Method
AssigneeInfineon Technologies AG
InventorsAlbert Birner, Helmut Brech, Matthias Zigldrum
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Abstract
In an embodiment, a semiconductor device includes a semiconductor substrate, a LDMOS transistor arranged in a front surface of the semiconductor substrate and a conductive through substrate via. The conductive through substrate via includes a via extending from the front surface to a rear surface of the semiconductor substrate, a conductive plug filling a first portion of the via and a conductive liner layer lining side walls of a second portion of the via and electrically coupled to the conductive plug.
Claims33
A semiconductor device, comprising:
- a semiconductor substrate;
- a LDMOS (Lateral Diffused Metal Oxide Semiconductor) transistor arranged in a front surface of the semiconductor substrate;
- and
- a conductive through substrate via,
- wherein the conductive through substrate via comprises:
- a via extending from the front surface to a rear surface of the semiconductor substrate;
- a conductive plug filling a first portion of the via, and
- a conductive liner layer lining side walls of a second portion of the via and electrically coupled to the conductive plug,
- wherein the conductive liner layer is positioned directly on the conductive plug such that the conductive liner layer contacts peripheral regions of an upper surface of the conductive plug, wherein the upper surface is arranged within the semiconductor substrate,
- wherein the first and second portions of the via are positioned between the front surface and the rear surface of the semiconductor substrate such that the conductive liner layer is positioned on the side walls formed by a material of the semiconductor substrate,
- wherein the conductive liner layer and the conductive plug have different microstructures,
- wherein the conductive plug and the conductive liner layer comprise copper.
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A method, comprising:
- forming an opening in a first surface of a semiconductor substrate comprising a LDMOS transistor structure in the first surface;
- forming a first conductive layer in a first portion of the opening in the semiconductor substrate using first deposition parameters such that the first conductive layer fills the opening in the first portion;
- and
- forming a second conductive layer on the first conductive layer in a second portion of the opening using second deposition parameters such that the second conductive layer bounds a gap in the second portion.
1 more element
Dependencies are inferred from the claim text.