Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device, the method comprising:

• forming, on a substrate, a semiconductor layer, a first sacrificial layer, a second sacrificial layer, and a first mask layer, sequentially;
• patterning the first mask layer using exposure to form a first mask pattern;
• transferring the first mask pattern onto the second sacrificial layer to form a second sacrificial pattern;
• forming spacer patterns on opposite sides of the second sacrificial pattern;
• forming a second mask layer that covers the spacer pattern;
• forming a supporting pattern on the second mask layer, wherein the supporting pattern is overlapped with the spacer pattern;
• patterning the second mask layer using exposure to form a second mask pattern;
• transferring the second mask pattern and the spacer pattern onto the first sacrificial layer to form a sacrificial gate pattern and a sacrificial supporting pattern;
• and
• transferring the sacrificial gate pattern and the sacrificial supporting pattern onto the semiconductor layer to form a gate and a supporting gate.

A method for fabricating a semiconductor device, the method comprising:

• forming, on a substrate, a semiconductor layer and a first sacrificial layer sequentially;
• forming a spacer pattern spaced apart from in a certain pitch on the first sacrificial layer;
• forming a mask layer that covers the spacer pattern;
• forming a supporting pattern on the mask layer, wherein the supporting pattern is overlapped with at least a portion of the spacer pattern;
• transferring the supporting pattern and the spacer pattern onto the first sacrificial layer to form a sacrificial gate pattern and a sacrificial supporting pattern;
• and
• transferring the sacrificial gate pattern and the sacrificial supporting pattern onto the semiconductor layer to form a gate and a supporting gate, wherein the gate and the supporting gate are extended by a first length in a first direction.