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US 2017/0372889 A1Published application
Methods of producing seed crystal substrates and group 13 element nitride crystals, and seed crystal substrates
AssigneeNGK Insulators, Ltd.
InventorsMasahiro SAKAI, Takashi YOSHINO
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Abstract
A seed crystal layer is provided on a supporting body. A laser light is irradiated from a side of the supporting body to provide an altered portion along an interface between the supporting body and seed crystal layer. The altered layer is composed of a nitride of a group 13 element and comprising a portion into which dislocation defects are introduced or an amorphous portion.
Claims11
A method of producing a seed crystal substrate, the method comprising the steps of:
- providing a seed crystal layer comprising a nitride of a group 13 element on a supporting body;
- and
- irradiating a laser light from a side of said supporting body to provide an altered portion along an interface between said supporting body and said seed crystal layer, said altered layer comprising said nitride of said group 13 element and comprising a portion with dislocation defects introduced therein or an amorphous portion.
A method of producing a crystal of a nitride of a group 13 element:
- the method comprising the steps of:
- providing a seed crystal layer comprising a nitride of a group 13 element on a supporting body;
- irradiating a laser light from a side of said supporting body to provide an altered portion along an interface between said supporting body and said seed crystal layer, said altered layer comprising said nitride of said group 13 element and comprising a portion with dislocation defects introduced within or an amorphous portion;
- and
- growing said crystal of said nitride of said group 13 element on said seed crystal layer.
2 more elements
A seed crystal substrate comprising:
- a supporting body;
- a seed crystal layer provided on said supporting body and comprising a nitride of a group 13 element;
- and
- an altered portion provided along an interface between said supporting body and said seed crystal layer, said altered layer comprising said nitride of said group 13 element and comprising a portion with dislocation defects introduced therein or an amorphous portion.
1 more element
Dependencies are inferred from the claim text.