Back to results
US 2017/0372884 A1Published application
Formation of epitaxial layers via dislocation filtering
AssigneeASM IP Holding B.V.
InventorsJoe Margetis, John Tolle
Life of this patent
Estimating the term…
Abstract
A process for forming a thick defect-free epitaxial layer is disclosed. The process may comprise forming a buffer layer and a sacrificial layer prior to forming the thick defect-free epitaxial layer. The sacrificial layer and the thick defect-free epitaxial layer may be formed of the same material and at the same process conditions.
Claims19
A process for forming an epitaxial film on a substrate, comprising:
- providing a reaction chamber, the reaction chamber holding a substrate to be processed;
- forming a buffer layer on the substrate;
- forming a sacrificial layer on top of the buffer layer;
- and
- forming a bulk layer on top of the sacrificial layer;
- wherein the sacrificial layer comprises at least one dislocation caused by an interfacial strain;
- and
- wherein the bulk layer is substantially free from dislocations caused by an interfacial strain.
5 more elements
A process for forming an epitaxial film on a substrate, comprising:
- providing a reaction chamber, the reaction chamber holding a substrate to be processed;
- forming a buffer layer on the substrate;
- forming a first dislocation filtering layer on top of the buffer layer;
- forming a first bulk layer on top of the first dislocation filtering layer;
- forming a second dislocation filtering layer on top of the first bulk layer;
- and
- forming a second bulk layer on top of the second dislocation filtering layer;
- wherein the first dislocation filtering layer and the second dislocation filtering layer comprise at least one dislocation caused by an interfacial strain;
- and
- wherein the first bulk layer and the second bulk layer are substantially free from dislocations caused by an interfacial strain.
7 more elements
Dependencies are inferred from the claim text.