Manufacturing method of semiconductor device
AssigneeRenesas Electronics Corporation
InventorKotaro HORIKOSHI
Life of this patent
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Abstract
A manufacturing method of a semiconductor device includes the steps of: (a) placing a semiconductor wafer over a stage provided in a chamber, the pressure in the inside of which is reduced by vacuum pumping; and (b) after the step (a), forming plasma in the chamber in a state where the semiconductor wafer is adsorbed and held by the stage, so that desired etching processing is performed on the semiconductor wafer. Herein, before the step (a), O2 gas, negative gas having an electronegativity higher than that of nitrogen gas, is introduced into the chamber to form O2 plasma in the chamber, thereby allowing the charges remaining over the stage to be eliminated.
Claims13
A manufacturing method of a semiconductor device comprising the steps of:
- (a) placing a semiconductor wafer over a stage provided in a vacuum vessel, the pressure in the inside of which is reduced by vacuum pumping;
- and
- (b) after the step (a), forming plasma in the vacuum vessel in a state where the semiconductor wafer is adsorbed and held by the stage, so that desired processing is performed on the semiconductor wafer,
- wherein before the step (a), process gas having an electronegativity higher than that of nitrogen gas is introduced into the vacuum vessel to form plasma in the vacuum vessel, thereby allowing a charge remaining over the stage to be eliminated.
A manufacturing method of semiconductor device, comprising the steps of:
- (a) placing a semiconductor wafer over a stage provided in a vacuum vessel, the pressure in the inside of which is reduced by vacuum pumping;
- and
- (b) after the step (a), forming plasma in the vacuum vessel in a state where the semiconductor wafer is adsorbed and held by the stage with the use of an electrostatic chuck system, so that etching processing is performed on the semiconductor wafer,
- wherein before the step (a), oxygen gas is introduced into the vacuum vessel to form plasma in the vacuum vessel, thereby allowing a charge remaining over the stage to be eliminated.
Dependencies are inferred from the claim text.