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US 2017/0372784 A1Published application
Connecting memory cells to a data line sequentially while applying a program voltage to the memory cells
AssigneeMicron Technology, Inc.
InventorsQiang Tang, Ramin Ghodsi, Toru Tanzawa
Life of this patent
Estimating the term…
Abstract
Programming methods include applying a voltage to a selected access line commonly connected to a plurality of memory cells, and, while the voltage applied to the selected access line remains at a program voltage without being discharged, electrically connecting a subset of the plurality of memory cells to one data line so that only one memory cell of the subset of the plurality of memory cells is electrically connected to the one data line at a time.
Claims20
A programming method, comprising:
- applying a voltage to a selected access line commonly connected to a plurality of memory cells, wherein respective ones of the plurality of memory cells are respectively in respective ones of a plurality of strings of series-connected memory cells;
- and
- while the voltage applied to the selected access line remains at a program voltage without being discharged, electrically connecting a subset of the plurality of memory cells to one data line so that only one memory cell of the subset of the plurality of memory cells is electrically connected to the one data line at a time.
A programming method, comprising:
- applying a program voltage to a selected access line commonly connected to a plurality of memory cells, wherein respective ones of the plurality of memory cells are respectively in respective ones of a plurality of strings of series-connected memory cells;
- and
- while the voltage applied to the selected access line remains at the program voltage without being discharged, sequentially electrically connecting a subset of the plurality of memory cells to one data line, each for a respective period of time, so that only one memory cell of the subset of the plurality of memory cells is electrically connected to the one data line at a time.
A programming method, comprising:
- programming first data in a first memory cell and second data in a second memory cell, wherein the first and second memory cells are commonly connected to a first access line;
- reading the first data from the first memory cell by applying a read voltage to the first access line while the first memory cell is electrically connected to a data line and while the second memory cell is electrically disconnected from the data line;
- reading the second data from the second memory cell by electrically disconnecting the first memory cell from the data line and electrically connecting the second memory cell to the data line while the read voltage remains applied to the first access line;
- and
- programming the read first data and the read second data in a single memory cell connected to a second access line.
2 more elements
Dependencies are inferred from the claim text.