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US 2017/0370875 A1Published application
Sensor system and device
AssigneeHitachi Automotive Systems, Ltd.
InventorsKazuo ONO, Toshiyuki USAGAWA
Life of this patent
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Abstract
The invention achieves a lower noise of a sense signal of a FET-type hydrogen sensor. For solving the above problem, one aspect of a sensor system of the invention includes a reference device and a sensor device configured using FETs on a substrate, and further, well potentials of the reference device and the sensor device are electrically isolated from each other.
Claims15
A sensor system comprising:
- a P-type semiconductor substrate;
- a sensor FET that is formed of a P-type FET within a first N-well formed on the P-type semiconductor substrate and has sensitivity to a sensing target;
- and
- a reference FET that is formed of a P-type FET within a second N-well formed on the P-type semiconductor substrate and does not have sensitivity to the sensing target, wherein
- the first N-well and the second N-well are electrically isolated from each other, and
- the sensor system includes a detection circuit that detects a difference between threshold voltages of the sensor FET and the reference FET in a gas atmosphere.
3 more elements
A sensor system comprising:
- a semiconductor substrate;
- a sensor FET that is formed of a FET within a first well formed on the semiconductor substrate and has sensitivity to a sensing target;
- and
- a reference FET that is formed of a FET within a second well formed on the semiconductor substrate and does not have sensitivity to the sensing target, wherein
- the first well and the second well are provided electrically isolated from each other,
- a source of the sensor FET and the first well are short-circuited,
- a source of the reference FET and the second well are short-circuited, and
- the sensor system includes a detection circuit that detects a difference between threshold voltages of the sensor FET and the reference FET in a gas atmosphere.
5 more elements
A sensor device comprising:
- on the same semiconductor substrate,
- a semiconductor region;
- a sensor FET that is formed of a FET within a first well formed in the semiconductor region and has sensitivity to a sensing target;
- a reference FET that is formed of a FET within a second well formed in the semiconductor region and does not have sensitivity to the sensing target;
- a configuration that prevents electrical continuity between the first well and the second well;
- a sensor signal output terminal that outputs a signal representing a threshold voltage of the sensor FET or a change in the threshold voltage;
- and
- a reference signal output terminal that outputs a signal representing a threshold voltage of the reference FET or a change in the threshold voltage.
5 more elements
Dependencies are inferred from the claim text.