Solid-state image sensor and imaging device using same

A solid-state image sensor comprising:

• a semiconductor substrate of a first conductive type;
• photoelectric conversion parts each of which is formed in a well region, and converts reflected light from a subject to calculate a distance to the subject, into signal charges;
• a pixel array part in which the photoelectric conversion parts are arranged in a matrix form;
• charge transfer parts in which the signal charges are read from the photoelectric conversion parts;
• a first epitaxial layer of the first conductive type formed at a surface part of the semiconductor substrate;
• a second epitaxial layer of the first conductive type formed on the first epitaxial layer;
• a first signal terminal to which a discharge pulsed signal that respectively defines a start and an end of an exposure time period by a fall and a rise of the discharge pulse signal is applied;
• a signal wiring pattern for transmitting the discharge pulse signal applied to the first signal terminal;
• a connecting part for electrically connecting the signal wiring pattern to a portion other than the well region on a surface of the semiconductor substrate;
• and
• an impurity induced part in which the discharge pulse signal is transmitted and impurity of the first conductive type is induced, below the connecting part in the semiconductor substrate,
• wherein
• in the photoelectric conversion parts, when an electrode driving signal for controlling read of the signal charges from the photoelectric conversion part to the charge transfer part is high, and the discharge pulse signal is low, the signal charges are read out, and when the electrode driving signal is high and the pulsed discharge signal is high, the signal charges are discharged, and
• the photoelectric conversion parts are further formed in the well region in the first epitaxial layer and the second epitaxial layer.