Plasma processing apparatus and microwave output device
AssigneeHitachi High-Technologies Corporation
InventorsKoichi Yamamoto, Atsushi Itou
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Abstract
A plasma processing apparatus includes: a high voltage power supply for supplying a high voltage power to a magnetron; and a detector for detecting a microwave output from the magnetron, wherein based on a result of comparing a signal, which is obtained by adding an output from the detector to an AC component of a current detected from an output of the high voltage power supply, with a setting value of the output of the high voltage power supply, the output of the high voltage power supply is adjusted.
Claims12
A plasma processing method for processing a wafer arranged in a processing chamber inside of which a plasma is generated using microwave the plasma processing method further comprising steps of:
- supplying a high voltage power from a high voltage power supply to a magnetron;
- generating the microwave using the magnetron;
- supplying process gas into the processing chamber;
- generating the plasma inside the processing chamber by using the exited process gas by the microwave propagated into the processing chamber;
- wherein the step of supplying a high voltage power further including steps of:
- detecting a microwave output from the magnetron;
- detecting an AC component current in the high voltage power supplied to the magnetron;
- comparing a first signal indicating of a predetermined setting value for the high voltage power with a second signal which is obtained by adding the signal indicating of the microwave output from the magnetron to the signal indicating of the AC component current in the high voltage power,
- adjusting the high voltage power supplied to the magnetron using a result of the step of comparing the first and second signals.
Dependencies are inferred from the claim text.