Electric Assembly Including an Insulated Gate Bipolar Transistor Device and a Wide-Bandgap Transistor Device
AssigneeInfineon Technologies AG
InventorsRoman Baburske, Johannes Georg Laven, Thomas Basler
Life of this patent
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Abstract
An electric assembly includes an insulated gate bipolar transistor device, a wide-bandgap transistor device electrically connected in parallel with the bipolar transistor device and a control circuit. The control circuit is electrically coupled to a gate terminal of the bipolar transistor device and to a control terminal of the wide-bandgap transistor device. The control circuit is configured to turn on the bipolar transistor device and to turn on the wide-bandgap transistor device at a predefined turn-on delay with respect to a turn-on of the bipolar transistor device.
Claims26
An electric assembly, comprising:
- an insulated gate bipolar transistor device;
- a wide-bandgap transistor device electrically connected in parallel with the bipolar transistor device;
- and
- a control circuit electrically coupled to a gate terminal of the bipolar transistor device and to a control terminal of the wide-bandgap transistor device, wherein the control circuit is configured to turn on the bipolar transistor device and to turn on the wide-bandgap transistor device at a predefined turn-on delay with respect to a turn-on of the bipolar transistor device.
An electric assembly, comprising:
- an insulated gate bipolar transistor device;
- a wide-bandgap transistor device electrically connected in parallel with the bipolar transistor device and comprising a plurality of field effect transistor cells electrically connected in parallel;
- and
- a backside construction directly adjoining a drain electrode and comprising one or more backside pn junctions.
An electric assembly, comprising:
- a reverse conducting insulated gate bipolar transistor device comprising desaturation transistor cells;
- a wide-bandgap transistor device electrically connected in parallel with the bipolar transistor device;
- and
- a control circuit electrically coupled to a gate terminal of the bipolar transistor device and to a control terminal of the wide-bandgap transistor device,
- wherein the control circuit is configured to turn on the desaturation transistor cells under reverse bias of the bipolar transistor device and to turn on both the bipolar transistor device and the wide-bandgap transistor device under forward bias of the bipolar transistor device.
Dependencies are inferred from the claim text.