Rf power transistor circuits
AssigneeNXP USA, Inc.
InventorsHussain H. LADHANI, Gerard J. BOUISSE, Jeffrey K. JONES
Life of this patent
Estimating the term…
Abstract
A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
Claims22
A radio frequency (RF) power transistor circuit comprising:
- a power transistor having a control electrode for receiving an RF input signal, and a first current electrode for providing an RF output signal;
- and
- a first decoupling circuit, comprising:
- a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the power transistor and a voltage reference, wherein the first resistor and the first inductive element are coupled in series between first and second nodes, and the first capacitor is coupled to the second node, and
- a second capacitor coupled between the first and second nodes in parallel with the first resistor and the first inductive element.
Dependencies are inferred from the claim text.