Semiconductor device including transmission lines and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJiun Yi WU, Chien-Hsun LEE, Chewn-Pu JOU, Fu-Lung HSUEH
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Abstract
A semiconductor device includes a first transmission line and a second transmission line. The semiconductor device further includes a high-k dielectric material between the first transmission line and the second transmission line. The semiconductor device further includes a dielectric material directly contacting at least one of the first transmission line or the second transmission line, wherein the dielectric material has a different dielectric constant from the high-k dielectric material.
Claims20
A semiconductor device comprising:
- a first transmission line;
- a second transmission line;
- a high-k dielectric material between the first transmission line and the second transmission line;
- and
- a dielectric material directly contacting at least one of the first transmission line or the second transmission line, wherein the dielectric material has a different dielectric constant from the high-k dielectric material.
A semiconductor device comprising:
- a first transmission line;
- a second transmission line, wherein the first transmission line is coaxial with the second transmission line;
- a high-k dielectric material between the first transmission line and the second transmission line;
- and
- a dielectric material surrounding the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material.
A method of making a semiconductor device, the method comprising:
- plating a first transmission line over a substrate;
- plating a second transmission line over the substrate;
- depositing a high-k dielectric material between the first transmission line and the second transmission line;
- and
- depositing a dielectric material directly contacting at least one of the first transmission line or the second transmission line, wherein the dielectric material is a different material from the high-k dielectric material.
Dependencies are inferred from the claim text.