Conversion element, optoelectronic semiconductor device and method for producing conversion elements

Conversion element comprising

• a conversion layer, which comprises a wavelength-converting conversion material,
• a first encapsulation layer on a first major face of the conversion layer, wherein the first encapsulation layer has a thickness of between 10 μm and 500 μm,
• a second encapsulation layer on a second major face of the conversion layer, wherein the second encapsulation layer has a thickness of between 0.1 μm and 20 μm, and wherein the second encapsulation layer comprises Al2O3, SiO2, ZrO2, TiO2, Si3N4, siloxane, SiOxNy and/or a parylene or consists of one of these materials,
• a frame element, which frame element is arranged on the first encapsulation layer and which frame element laterally encloses the conversion layer.