Semiconductor light-emitting devices and methods of manufacturing the same

A semiconductor light-emitting device, comprising:

• an emission structure;
• a protection pattern layer on a limited region of the emission structure,
• an insulating pattern layer on the emission structure and the protection pattern layer, the insulating pattern layer including an opening penetrating the insulating pattern layer, wherein the opening is above a top surface of the protection pattern layer such that the emission structure is covered by at least one of the insulating pattern layer and the protection pattern layer;
• and
• an electrode layer on the protection pattern layer and in the opening, the electrode layer further on the insulating pattern layer.

A semiconductor light-emitting device, comprising:

• an emission structure;
• a protection pattern layer on a limited region of the emission structure;
• and
• an insulating pattern layer on the emission structure, the insulating pattern layer including an opening penetrating the insulating pattern layer, wherein the opening is above the protection pattern layer, such that the emission structure is covered by at least one of the insulating pattern layer and the protection pattern layer.