Method for producing doped polycrystalline semiconductor layers

2:

• The method according to claim 1, wherein the first composition and/or optionally the second composition is applied to the semiconductor substrate by a printing or spraying method.

3:

• The method according to claim 1, wherein
• (a) the at least one n-type dopant is selected from phosphorus-containing dopants, antimony-containing dopants, and mixtures of the above, and/or
• (b) the at least one p-type dopant is selected from boron-containing dopants and mixtures thereof.

4:

• The method according to claim 1, wherein the precursor is a polysilane.

5:

• The method according to claim 4, wherein the precursor has the generic formula SinXc with X=H, F, Cl, Br, I, C1-C10-alkyl, C1-C10-alkenyl, C5-C20-aryl, n≧4 and 2n≦c≦2n+2.

6:

• The method according to claim 4, wherein the precursor is a silicon-containing nanoparticle.

7:

• The method according to claim 4, wherein the precursor composition comprises at least two precursors of which at least one is a hydridosilane oligomer and at least one is an optionally branched hydridosilane of the generic formula SinH2n+2 with n=3 to 20.

9:

• The method according to claim 1, wherein the precursor is converted to polycrystalline silicon using electromagnetic radiation and/or electron or ion bombardment and/or by a thermal method.

10:

• The method according to claim 9, wherein the conversion to polycrystalline silicon is effected thermally at a temperature in the range of 300-1200° C.

11:

• The method according to claim 1, wherein the process further comprises the step of creating a dielectric layer on the semiconductor substrate, where the first and/or second precursor composition is subsequently applied to the dielectric layer.

12:

• The method according to claim 11, wherein the dielectric layer is SiOx or AlxOy.

13:

• The method according to claim 1, wherein the semiconductor substrate is a silicon wafer.

14:

• The method according to claim 1, wherein the first composition and the second composition are applied to the same side of the semiconductor substrate.

15:

• The method according to claim 1, wherein the first composition and the second composition are applied to the opposite sides of the semiconductor substrate.

16:

• A semiconductor substrate, produced by a method according to claim 1.

17:

• A method for producing a solar cell, said method comprising:
• forming a doped polycrystalline semiconductor layer on said semiconductor substrate of claim 16.

18:

• A solar cell or solar module, comprising:
• the semiconductor substrate according to claim 16.

19:

• The method according to claim 14, wherein the first composition and the second composition are applied to the same side of the semiconductor substrate in an interdigitated structure.