Dilute nitride bismide semiconductor alloys

A multijunction photovoltaic cell comprising a dilute nitride bismide subcell, wherein, the dilute nitride bismide subcell comprises:

• Ga1xInxNyAs1-y-zBiz, wherein the content values for x, y, and z are within composition ranges as follows:
• 0.03≦x≦0.19, 0.008≦y≦0.055, and 0.001≦z≦0.09;
• Ga1-xInxNyAs1-y-z1-z2Sbz1Biz2;
• wherein the content values for x, y, and z are within composition ranges as follows:
• 0.03≦x≦0.19, 0.008≦y≦0.055, and 0.001≦z1+z2≦0.09;
• GaNyAs1-y-xBiz, wherein the content values for y and z are within composition ranges as follows:
• 0.001≦y≦0.055, and 0.001≦z≦0.09;
• or
• GaNyAs1-y-z1-z2Sbz1Biz2, wherein the content values for y and z are within composition ranges as follows:
• 0.001≦y≦0.055, and 0.001≦z1+z2≦0.09. and the dilute nitride bismide subcell is characterized by,
• an efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.30 eV, and an efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.30 eV;
• an efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.18 eV, and an efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.30 eV;
• an efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.10 eV, and an efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.18 eV;
• an efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.03 eV, and an efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.15 eV;
• an efficiency of at least 70% at an irradiance energy from 1.38 eV to 0.99 eV, and an efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.15 eV;
• or
• an efficiency of at least 60% at an irradiance energy from 1.38 eV to 0.92 eV, an efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.03 eV, and an efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.15 eV;
• wherein
• the efficiency is measured at a junction temperature of 25° C.