Back to results
US 2017/0365726 A1Published application
Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions
AssigneesMicron Technology, Inc., Massachusetts Institute of Technology
InventorsRoy Meade, Karan Mehta, Efraim Megged, Jason Orcutt, Milos Popovic, Rajeev Ram, Jeffrey Shainline, Zvi Sternberg, Vladimir Stojanovic, Ofer Tehar-Zahav
Life of this patent
Estimating the term…
Abstract
Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.
Claims10
1-12. (canceled)
A method of forming an integrated structure, the method comprising:
- forming a first photonic device and the gate of at least one transistor of the same first polysilicon material;
- and
- forming a waveguide core of a second polysilicon material which is coplanar with the first polysilicon material and has different optical properties from the first polysilicon material.
Dependencies are inferred from the claim text.