Process of forming metal-insulator-metal (mim) capacitor
AssigneeSumitomo Electric Device Innovations, Inc.
InventorYoshihide KOMATSU
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Abstract
A metal-insulator-metal (MIM) capacitor and a process of forming the same are disclosed. The process includes steps of: forming a lower electrode that provides a lower layer and an upper layer; forming an opening in the upper layer; forming a supplemental layer on the lower layer exposed in the opening; heat treating the lower electrode and the supplemental layer; covering at least the upper layer of the lower electrode with an insulating film; and forming an upper electrode in an area on the insulating film, where the area is not overlapped with the supplemental layer and within 100 μm at most from the supplemental layer. A feature of the MIM capacitor is that the supplemental layer is made of metal same with a metal contained in the lower layer of the lower electrode.
Claims17
A process of forming a metal-insulator-metal (MIM) capacitor, comprising steps of:
- forming a lower electrode including a lower layer and an upper layer that is made of refractory metal;
- forming an opening in the upper layer of the lower electrode;
- forming a supplemental layer on the lower layer exposed within the opening of the upper layer;
- heat treating the lower electrode and the supplemental layer at a temperature higher than 300° C.;
- covering at least the upper layer of the lower electrode with an insulating film;
- and
- forming an upper electrode in an area on the insulating film, the area being not overlapped with the supplemental layer and within 100 μm at most from the supplemental layer,
- wherein the supplement layer is made of metal same with a metal contained in the lower layer of the lower electrode.
A metal-insulator-metal (MIM) capacitor, comprising:
- a lower electrode including a lower layer and an upper layer provided on the lower layer, the upper layer including an opening through which the lower layer exposes;
- a supplemental layer provided on the lower layer of the lower electrode exposed within the opening of the upper layer;
- an insulating film covering at least the upper layer of the lower electrode;
- and
- an upper electrode provided in an area on the insulating film, the area being not overlapped with the supplemental layer and within 100 μm at most from the supplemental layer,
- wherein the supplemental layer is made of metal contained in the lower layer of the lower electrode.
Dependencies are inferred from the claim text.