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US 2017/0365705 A1Published application
Structure and formation method of semiconductor device structure with gate stacks
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYa-Wen YANG, Tsung-Yu CHIANG
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Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a first gate stack over the semiconductor substrate. The first gate stack includes a metal electrode. The semiconductor device structure also includes a second gate stack over the semiconductor substrate, and the second gate stack includes a polysilicon element.
Claims21
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a first gate stack over the semiconductor substrate, wherein the first gate stack comprises a metal electrode;
- and
- a second gate stack over the semiconductor substrate, wherein the second gate stack comprises a polysilicon element.
1 more element
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a first gate stack over the semiconductor substrate, wherein the first gate stack comprises a first metal electrode;
- a second gate stack over the semiconductor substrate, wherein the second gate stack comprises a polysilicon element;
- and
- a third gate stack over the semiconductor substrate, wherein the third gate stack comprises a second metal electrode, and the second gate stack is between the first gate stack and the third gate stack.
2 more elements
16-20. (canceled)
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a first gate stack over the semiconductor substrate, wherein the first gate stack comprises a metal electrode;
- a second gate stack over the semiconductor substrate, wherein the second gate stack comprises a semiconductor element;
- and
- a fin structure over the semiconductor substrate, wherein the first gate stack covers a portion of the fin structure.
2 more elements
Dependencies are inferred from the claim text.