US 2017/0365701 A1 · Charge Trapping Prevention III-Nitride Transistor

Abstract

There are disclosed herein various implementations of a charge trapping prevention III-Nitride transistor. Such a transistor may be a III-Nitride high electron mobility transistor (HEMT) including a III-Nitride intermediate body situated over a substrate, a channel layer situated over the III-Nitride intermediate body, and a barrier layer situated over the channel layer. The channel layer and the barrier layer are configured to produce a two-dimensional electron gas (2DEG). In addition, the III-Nitride transistor includes a dielectric layer situated over the barrier layer, a gate coupled to the barrier layer, and a drain electrode and a source electrode each extending through the dielectric layer. The drain electrode makes ohmic contact with one or both of the barrier layer and a charge trapping prevention layer situated between the dielectric layer and the barrier layer.

Claims21

Dependent claims

A III-Nitride high electron mobility transistor (HEMT) comprising:

a III-Nitride intermediate body situated over a substrate;
a channel layer situated over said III-Nitride intermediate body, and a barrier layer situated over said channel layer, said channel layer and said barrier layer being configured to produce a two-dimensional electron gas (2DEG);
a dielectric layer situated over said barrier layer;
a gate coupled to said barrier layer, and a drain electrode and a source electrode each extending through said dielectric layer;
a charge trapping prevention layer situated between said dielectric layer and said barrier layer;
wherein said drain electrode makes ohmic contact with at least one of said charge trapping prevention layer and said barrier layer;
wherein said charge trapping prevention layer is devoid of P type dopants.

4 more elements

Dependencies are inferred from the claim text.

Charge Trapping Prevention III-Nitride Transistor

Life of this patent

Charge Trapping Prevention III-Nitride Transistor

Life of this patent

Abstract

Claims21