Low Dislocation Density III-Nitride Semiconductor Component
AssigneeInfineon Technologies Americas Corp.
InventorsChan Kyung Choi, Mihir Tungare, Peter Wook Kim
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Abstract
There are disclosed herein various implementations of a semiconductor component including a protrusion propagation body. The semiconductor component includes a substrate, a III-Nitride intermediate stack including the protrusion propagation body situated over the substrate, a III-Nitride buffer layer situated over the group III-V intermediate stack, and a III-Nitride device fabricated over the group III-V buffer layer. The protrusion propagation body includes at least a protrusion generating layer and two or more protrusion spreading multilayers.
Claims23
A semiconductor component comprising:
- a substrate;
- a nucleation layer situated over said substrate;
- a III-Nitride intermediate stack situated over said nucleation layer;
- a III-Nitride buffer layer situated over said III-Nitride intermediate stack;
- a III-Nitride device fabricated over said III-Nitride buffer layer;
- wherein said III-Nitride intermediate stack comprises a transition body situated over a protrusion propagation body, said protrusion propagation body including a protrusion generating layer and a plurality of protrusion spreading multilayers.
A semiconductor component comprising:
- a substrate;
- a nucleation layer situated over said substrate;
- a III-Nitride intermediate stack situated over said nucleation layer;
- a III-Nitride buffer layer situated over said III-Nitride intermediate stack;
- a III-Nitride device fabricated over said III-Nitride buffer layer;
- wherein said III-Nitride intermediate stack comprises a protrusion propagation body situated over a transition body, said protrusion propagation body including a protrusion inducing layer, a protrusion generating layer, a plurality of protrusion spreading multilayers, and a plurality of protrusions originating from said protrusion generating layer and propagating into said protrusion spreading multilayers, wherein said protrusions propagate laterally in a direction normal to said substrate from a lower layer of said protrusion spreading multilayers to a layer of said protrusion spreading multilayers above the lower layer so that said protrusions are wider and thinner at said upper layer as compared to at said lower layer.
Dependencies are inferred from the claim text.