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US 2017/0365697 A1Published application
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorHitoshi MATSUURA
Life of this patent
Estimating the term…
Abstract
The performance of a semiconductor device is improved. An emitter electrode is coupled to a P-type body region and an N+-type emitter region of a linear active cell region via a contact groove formed on an interlayer insulating film and is coupled to a P-type body region of a linear hole connector cell region via a contact groove. The contact grooves arranged in the linear hole connector cell region are shorter than the contact groove in plan view.
Claims16
(canceled)
A semiconductor device comprising:
- a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface;
- a collector electrode formed over the second major surface;
- a collector region formed with a first conductivity type in contact with the collector electrode, near the second major surface of the semiconductor substrate;
- a drift region formed with a second conductivity type different from the first conductivity type, over the collector region;
- a first gate electrode and a second gate electrode that are formed from the first major surface to the second major surface and are extended along a first direction of the first major surface in plan view;
- a first body region formed with the first conductivity type between the first gate electrode and the second gate electrode;
- an emitter region formed with the second conductivity type over the first body region;
- a third gate electrode and a fourth gate electrode that are formed from the first major surface to the second major surface and are extended along the first direction in plan view;
- a second body region formed with the first conductivity type between the third gate electrode and the fourth gate electrode and extended along the first direction;
- an interlayer insulating film covering the first major surface;
- and
- an emitter electrode that is formed over the interlayer insulating film, is coupled to the first body region and the emitter region via a first contact groove formed over the interlayer insulating film, and is coupled to a continuous portion of the second body region via a plurality of second contact grooves formed over the interlayer insulating film,
- wherein the second contact grooves are shorter than the first contact groove in the first direction, and
- wherein a number of the second contact grooves are greater than a number of the first contact groove in the first direction.
11 more elements
A semiconductor device comprising:
- a semiconductor substrate having a first major surface and a second major surface opposite to the first major surface;
- a collector electrode formed over the second major surface;
- a collector region formed with a first conductivity type in contact with the collector electrode, near the second major surface of the semiconductor substrate;
- a drift region formed with a second conductivity type different from the first conductivity type, over the collector region;
- a first gate electrode and a second gate electrode that are formed from the first major surface to the second major surface and are extended along a first direction of the first major surface in plan view;
- a first body region formed with the first conductivity type between the first gate electrode and the second gate electrode;
- an emitter region formed with the second conductivity type over the first body region;
- a third gate electrode and a fourth gate electrode that are formed from the first major surface to the second major surface and are extended along the first direction of the first major surface in plan view;
- a first coupling part, a second coupling part, and a third coupling part that are extended in a second direction intersecting the first direction and couple the third gate electrode and the fourth gate electrode;
- a second body region formed with the first conductivity type between the first coupling part and the second coupling part and a floating region formed with the first conductivity type between the second coupling part and the third coupling part, between the third gate electrode and the fourth gate electrode,
- an interlayer insulating film covering the first major surface;
- and
- an emitter electrode that is formed over the interlayer insulating film, is coupled to the second body region via a first contact groove formed over the interlayer insulating film, and is coupled to the floating region via a second contact groove formed over the interlayer insulating film,
- wherein the first contact groove is longer than the second contact groove in the first direction, and
- wherein a number of the second contact grooves are greater than a number of the first contact groove in the first direction.
12 more elements
Dependencies are inferred from the claim text.