Manufacturing method for compound semiconductor device
AssigneeAdvantest Corporation
InventorTaku SATO
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Abstract
A support substrate is bonded to a GaN epitaxial substrate including at least an electron transport layer and an electron supply layer grown on a growth substrate in the Ga-polar direction such that the support substrate faces the Ga-plane of the GaN epitaxial substrate. Furthermore, at least the growth substrate is removed from the GaN epitaxial substrate so as to expose an N-plane of the GaN epitaxial substrate. Subsequently, a semiconductor element is formed on the N-plane side.
Claims12
A manufacturing method for a compound semiconductor device, wherein a semiconductor element is formed on an N-plane side of a GaN epitaxial substrate grown in a Ga-polar direction.
A manufacturing method for a compound semiconductor device comprising:
- bonding a support substrate to a GaN epitaxial substrate having a multilayer structure comprising at least an electron transport layer and an electron supply layer multilayered on a growth substrate in a Ga-polar direction such that the support substrate faces a Ga-plane of the GaN epitaxial substrate;
- removing at least the growth substrate from the GaN epitaxial substrate so as to expose an N-plane of the GaN epitaxial substrate;
- and
- forming a semiconductor element on the N-plane side.
Dependencies are inferred from the claim text.