Self-aligned contact and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTung Ying Lee, Chih Chieh Yeh, Jeng-Ya David Yeh, Yuan-Hung Chiu, Chi-Wen Liu, Yee-Chia Yeo
Life of this patent
Estimating the term…
Abstract
A semiconductor device and a method of forming the semiconductor device is disclosed. A sacrificial film is used to pattern a contact to a semiconductor structure, such as a contact to a source/drain region of a transistor. The contact may include a tapered profile along an axis parallel to the gate electrode such that an outermost width of the contact decreases as the contact extends away from the source/drain region.
Claims21
A method of forming a semiconductor device, the method comprising:
- forming a sacrificial film over a source/drain region of a fin and an isolation region adjacent the fin;
- removing a first portion of the sacrificial film over the isolation region to form a first recess, a second portion of the sacrificial film over the source/drain region remaining;
- forming a dielectric layer in the first recess;
- removing the second portion of the sacrificial film to form a second recess;
- and
- forming a conductive layer in the second recess.
A method of forming a semiconductor device, the method comprising:
- forming a first gate electrode and a second gate electrode over a semiconductor structure;
- forming a first sacrificial film between the first gate electrode and the second gate electrode;
- patterning the first sacrificial film such that a remaining portion of the first sacrificial film remains over the semiconductor structure and such that first recesses are formed between the first gate electrode and the second gate electrode on opposing sides of the remaining portion of the first sacrificial film;
- forming an interlayer dielectric (ILD) in the first recesses;
- removing the remaining portion of the first sacrificial film to form a second recess;
- and
- forming a conductive feature in the second recess.
-20. (canceled)
A method of forming a semiconductor device, the method comprising:
- forming a first gate structure and a second gate structure over a semiconductor structure;
- forming a first sacrificial material between the first gate structure and the second gate structure;
- patterning the first sacrificial material to form dummy source/drain contact interposed between the first gate structure and the second gate structure;
- forming an interlayer dielectric (ILD) adjacent the dummy source/drain contact, the ILD being interposed between the first gate structure and the second gate structure;
- and
- replacing the dummy source/drain contact with a conductive feature.
Dependencies are inferred from the claim text.