Uniform vertical field effect transistor spacers
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Juntao Li
Life of this patent
Estimating the term…
Abstract
Aspects of the disclosure include a semiconductor structure that includes a vertical fin structure having a top portion, a bottom portion, vertical side walls, a source area in contact with the vertical fin structure, a drain area in contact with the vertical fin structure, a plurality of spacers comprising a first oxide layer in contact with the source area, and a second oxide layer in contact with the drain area. The first oxide layer can have a thickness that is equal to a thickness of the second oxide layer.
Claims29
A semiconductor structure comprising:
- a vertical fin structure having a top portion, a bottom portion, and vertical side walls;
- a source lining the top portion of the vertical fin structure;
- a drain lining the bottom portion of the vertical fin structure;
- a plurality of spacers comprising a first oxide layer lining at least a portion of the source, and a second oxide layer lining at least a portion of the drain;
- wherein the first oxide layer has a thickness that is equal to a thickness of the second oxide layer;
- and
- wherein the first oxide layer and the second oxide layer do not contact each other.
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
A semiconductor structure comprising:
- a vertical fin structure having a top portion, a bottom portion, and vertical side walls;
- a source lining the bottom portion of the vertical fin structure;
- a drain lining the top portion of the vertical fin structure;
- a plurality of spacers comprising a first oxide layer lining at least a portion of the source, and a second oxide layer lining at least a portion of the drain;
- wherein the first oxide layer has a thickness that is equal to a thickness of the second oxide layer;
- and
- wherein the first oxide layer and the second oxide layer do not contact each other.
Dependencies are inferred from the claim text.