Wide bandgap field effect transistors with source connected field plates
AssigneeCree, Inc.
InventorsYifeng Wu, Primit Parikh, Umesh Mishra, Marcia Moore
Life of this patent
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Abstract
A field effect transistor comprising a buffer and channel layer formed successively on a substrate. A source electrode, drain electrode, and gate are all formed in electrical contact with the channel layer, with the gate between the source and drain electrodes. A spacer layer is formed on at least a portion of a surface of the channel layer between the gate and drain electrode and a field plate is formed on the spacer layer isolated from the gate and channel layer. The spacer layer is electrically connected by at least one conductive path to the source electrode, wherein the field plate reduces the peak operating electric field in the device.
Claims18
A field effect transistor, comprising:
- an active region;
- a source electrode in electrical contact with said active region;
- a drain electrode in electrical contact with said active region;
- a gate in electrical contact with said active region, said gate between said source electrode and said drain electrode;
- a spacer layer on at least a portion of said gate electrode;
- a field plate on said spacer layer between said gate electrode and said drain electrode;
- and
- at least one conductive bus extending substantially perpendicular to said field plate and electrically connecting said field plate to said source electrode.
A field effect transistor, comprising:
- an active region;
- a source electrode in electrical contact with said active region;
- a drain electrode in electrical contact with said active region;
- a gate in electrical contact with said active region, said gate between said source electrode and said drain electrode;
- a spacer layer on at least a portion of said gate electrode;
- a field plate on said spacer layer, said field plate disposed at least partially between said gate and said drain electrode and overlapping only a portion of said gate;
- and
- at least one conductive path providing an electrical connection between said field plate and said source electrode, said conductive path covering less than all of said spacer layer between said gate and said source electrode.
Dependencies are inferred from the claim text.