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US 2017/0365668 A1Published application
Semiconductor Device Channel System and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGerben Doornbos, Krishna Kumar Bhuwalka, Matthias Passlack
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Abstract
A system and method for a channel region is disclosed. An embodiment comprises a channel region with multiple bi-layers comprising alternating complementary materials such as layers of InAs and layers of GaSb. The alternating layers of complementary materials provide desirable band gap characteristics for the channel region as a whole that individual layers of material may not.
Claims20
A method comprising:
- growing a first layer over a substrate, the first layer comprising a first III-V material;
- growing a second layer on the first layer, the second layer comprising a second III-V material different from the first III-V material;
- repeating the growing the first layer and the growing the second layer one or more times to form a channel region, the channel region having an effective band gap different from a band gap of the first III-V material and a band gap of the second III-V material;
- and
- forming a gate stack over the channel region, the gate stack comprising a gate dielectric and a gate electrode, an interface between the channel region and the gate dielectric having an interface trap density, the interface trap density at a lowest energy of the effective band gap of the channel region being between about 1E+11 cm−2·eV−1 and about 1E+12 cm−2·eV−1.
2 more elements
A method comprising:
- forming a channel region over a substrate, wherein forming the channel region comprises:
- epitaxial growing a first III-V material over the substrate, the first III-V material having a first band gap;
- and
- epitaxial growing a second III-V material over the first III-V material, the second III-V material being different from the first III-V material, the second III-V material having a second band gap, the channel region having an effective band gap between the first band gap and the second band gap;
- and
- forming a material over the channel region, wherein the forming the material forms an interface between the channel region and the material having an interface trap density, the interface trap density at a lowest energy of the effective band gap of the channel region being between about 1E+11 cm−2·eV−1 and about 1E+12 cm−2·eV−1.
3 more elements
A method comprising:
- forming isolation regions over a substrate;
- forming a template layer in a trench between adjacent isolation regions;
- forming an insulator layer in the trench and over the template layer;
- forming a channel region over the insulator layer, the insulator layer and the template layer having sidewalls aligned with a sidewall of the channel region, a topmost surface of the channel region being above topmost surfaces of the isolation regions, wherein forming the channel region comprises:
- epitaxial growing a first III-V material over the insulator layer, the first III-V material having a first band gap;
- and
- epitaxial growing a second III-V material over the first III-V material, the second III-V material being different from the first III-V material, the second III-V material having a second band gap, the channel region having an effective band gap between the first band gap and the second band gap;
- and
- forming a gate stack over the channel region, wherein forming the gate stack comprises:
- forming a gate dielectric along the topmost surface and the sidewall of the channel region, an interface between the channel region and the gate dielectric having an interface trap density, the interface trap density at a lowest energy of the effective band gap of the channel region being between about 1E+11 cm−2·eV−1 and about 1E+12 cm−2·eV−1;
- and
- forming a gate electrode over the gate dielectric.
9 more elements
Dependencies are inferred from the claim text.